Abstract
AbstractVOx thin films were fabricated on Si3N4/SiO2/Si substrates by firing precursor films, which were fabricated by metal‐organic decomposition (MOD), with a reduced pressure. Resistance‐temperature (R‐T) characteristics of the films indicating the phase transition from metal to insulator with about 4 orders of resistance change specified with VO2 (M) were obtained. Furthermore, the films fabricated with a firing temperature of 580‐600°C had temperature coefficient of resistance (TCR) of −2.8 to −2.9 %/K at room temperature. After fabricating VOx microbolometers with 40 × 10 μm2 using the films on Si3N4/SiO2/Si substrates, Si with a thickness of about 340 μm was etched using Deep‐RIE and XeF2 vapor etching from the backside of the substrate. Then, the VOx microbolometer was completed on Si3N4/SiO2 membrane. The VOx microbolometer on Si3N4/SiO2 membrane had a high DC sensitivity of 2310 W−1, which was about 15 times higher than that of the microbolometer on the Si3N4/SiO2/Si substrate.
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