Abstract
We evaluated TaSix-based bi-layer absorber on ZrSi-based buffer for EUV mask, especially considering the possibility of ZrSi-based film as a combined buffer and capping layer. Since ZrSi-based film has both high dry-etching resistance and EUV transparency, it has potentiality to work as a combined capping and buffer layer. AFM machining repair of bi-layer TaSix absorber on ZrSi-based buffer can be performed to good profile. Printing evaluation showed that over-repair into buffer layer did not affect significantly to wafer CD. FIB (10keV) repair of bi-layer TaSix absorber on ZrSi-based buffer needs improvement for side-wall profile and distinguishable evaluation from implanted Ga<sup>+</sup> effect in more detail. Effect of FIB (10keV) scan with ordinary repair process seems to be at least smaller than 10%.
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