Abstract
films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced complementary metal oxide semiconductor devices. The films were deposited at 400°C using and as precursors. For , was added as a precursor, yielding an average silicon content of [ presented at The Electrochemical Society Meeting, Oct 16–21, 2005 , Los Angeles, CA ]. The work function of these films was determined by high-frequency capacitance–voltage measurements on two thickness series, one of thermal oxides and one of ALD followed by an postdeposition anneal. It was found that has a work function of on and on . However, thermal stability is limited to . The thermal stability on is increased by incorporation of silicon into the . has a work function of on and on .
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