Abstract
AbstractTemperature dependent time‐resolved photoluminescence is used to study the development of active regions for optoelectronic devices employing AlGaN nanostructures for deep‐UV emission. The changing importance of dislocation versus point defects and their relationship to different forms of carrier localization are discussed. The results presented suggest that AlGaN nanostructure development for deep‐UV emitters require both point defect/impurity suppression for improved efficiency and lower dislocation density for improved interface quality. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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