Abstract
A simplified simulation approach aiming at reducing computational complexity has been proposed for gated field emitters. In this approach, a thin-film cold cathode consisting of quasi-one-dimensional nanoemitters is modeled as a flat metallic thin-film. The surface of the thin-film is divided into equal-size grids. Fowler–Nordheim parameters fitted with experimental current-voltage data are used to calculate emission current from these individual grids. The statistics of the total emission current and its distribution between the gates and the anode are analyzed by summing the currents from all of the grids. The validity of the proposed approach is evaluated by comparing the simulation results with experimental data from gated carbon nanotube (CNT) thin-film field emitters. CNTs at the edge of the CNT film stand out as superior emitters, and proper consideration of such emitters plays a critical role in determining the validity of the proposed approach.
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