Etude de la formation des cavités dans le cuivre irradie aux ions cuivre de 500 keV

Abstract

We have studied the formation of voids in thin foils of copper irradiated by 500 keV Cu + ions, as a function of temperature, irradiation intensity and the dissolved gas content of the samples. A theoretical examination of the phenomena gives a good account of the effects of temperature, the rate of defect creation and the foil thickness, but it fails to account for the fact that at 400° C voids are formed for a dose of 3 × 10 −4 dpa/s but not for 3 × 10 −3 dpa/s. This is tentatively explained in terms of the influence of the gas content. The effect of gas content on the formation of voids and dislocation loops has moreover been demonstrated by degassing thin foils by annealing in ultrahigh vacuum, or by implanting helium before irradiation.