Abstract
Photovoltaic (PV) technology plays a significant role in renewable energy research, while devices based on hybrid perovskite materials have reached efficiencies which exceed 26 %. Nevertheless, perovskite solar cells (PSCs) are facing chemical, thermal and humidity stability issues, which prevent their commercialization. Thus, the use of quantum dots (QDs) has been proposed as an innovative strategy to tackle with device performance issues. This work investigates the effect of PbS and CdS chalcogenide QDs on the interface modification of CsFAMAPbI3-xBrx PSCs. The successive ionic layer adsorption and reaction (SILAR) method was employed as an innovative engineering approach to adjust effectively the perovskite interface energetics and optimize the solar cell's characteristics. By tuning the deposition conditions of QDs and adding TiCl4 to the electron transport layer (ETL), an efficiency improvement from 15.52 to 18.83 % was recorded. These results highlight the use of a facile and fast method to integrate chalcogenide quantum dots into perovskite-based optoelectronic devices, thus improving the surface crystallinity and overall device performance.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call