Etching rate modification in silicon oxide by ion implantation and rapid thermal annealing

Abstract

In this work we present the radiation damage effects produced by argon ion implantation on thermally grown silicon dioxide and its evolution with annealing treatments. The etching rate measurements obtained with a buffered HF solution have been correlated with the structural network damage characterized by infrared spectroscopy. Two mechanisms that produce an increase of etching rate with dose have been found: the structural damage and the formation of nonstoichiometric layers.