Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas

Abstract

4H-silicon carbide epitaxial film was etched using chlorine trifluoride gas. The etch rate of C-face at 2-100 % and at various temperatures was 0.8 – 10 μm min-1, which was comparable to those of the silicon carbide substrates. The surface morphology observed after the etching was very smooth, in contrast to that of the substrate showing many pits.