Abstract
This chapter deals with laser-induced etching of element and compound semiconductors. An inspection of Appendix B.3 shows that the most detailed investigations on dry-etching have been performed for Si, GaAs, and InP. The precursor molecules mainly employed include halides and halogen compounds such as Cl2, HCl, XeF2, NF3, CCl4, CF3Br, CF3I, and SF6. Laser-induced wet-etching has been studied mainly for compound semiconductors in aqueous solutions of H2SO4/H2O2, HNO3, and KOH.
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