Abstract
We investigated inductively coupled plasma (ICP) etching of both In-containing (InP, InAs, and InSb) and Ga-containing compound semiconductors (GaAs, GaP, and GaSb) in two new chemistries: BI3 and BBr3 with addition of Ar. Etch rates as high as 2 µm·min−1 were obtained for InP in both types of discharge while for GaAs maximum rates were 1 and 2.5 µm·min−1, respectively, in BI3 and BBr3. The rates were strongly dependent on plasma composition, ICP source power and radio frquency chuck power. BI3 etching produced much smoother surfaces on both GaAs and InP, while maintaining the near-surface stoichiometry. Etch selectivities ≥ 10 were obtained for GaAs and InP over SiO2 and SiNx masks. The BI3 chemistry appears attractive as an universal etchant for In-based and Ga-based compound semiconductors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
