Etching of p- and n-type doped monocrystalline diamond using an ECR oxygen plasma source

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Simultaneous etching of NID, lightly boron-doped, phosphorus-doped homoepitaxial CVD films and Ib HPHT crystal was achieved at RT in a home-made reactor producing O2 ECR plasma which was homogeneous on approximately 200 cm−2. Etching rates varying from 60 (at −30 V) to 40 or 120 nm/min (at −140 V) are obtained with n- or p-type-doped samples, respectively. These etching rates are higher than those with O2 RF plasma, and those with previous inhomogeneous O2 ECR plasma with samples at 100 °C.