Abstract
This work demonstrates that ion assisted etching of hexagonal boron nitride is possible in addition to sputtering because of the ion bombardment in rf plasma environments. In order to study the presence of possible physical and chemical mechanisms, post treatments of boron nitride coatings were performed using pure argon, Ar/H2, and Ar/Cl2 plasma mixtures. This study reveals the effects of ion bombardment, H/H2 atoms, and Cl/Cl2 on the h-BN content in the films. It was found that, in addition to ion bombardment, hydrogen atoms and even more efficiently Cl and/or Cl2 can be used as chemical etchants for sp2 bonded boron nitride.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
