Abstract
This work was devoted to an investigation of etching mechanisms for (Ba,Sr)TiO 3 (BST) thin films in inductively coupled CF 4/Ar plasma. We have found that an increase of the Ar content in CF 4/Ar plasma causes non-monotonic behavior of BST etch rate, which reaches a maximum value of 40 nm/min at 80% Ar. The X-ray photoelectron spectroscopy (XPS) analysis indicated the accumulation of reaction products on the BST film surface in CF 4-rich plasma. Langmuir probe measurements show a weak sensitivity of both electron temperature and electron density to the change of CF 4/Ar mixing ratio. 0-D model for plasma chemistry gave monotonic changes of both volume densities and fluxes for active species responsible for the etching process. The analysis of surface kinetics confirms the possibility of non-monotonic etch rate behavior due to the concurrence of physical and chemical pathways in ion-assisted chemical reaction.
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