Abstract
The etching mechanism of Pb(Zr,Ti)O3 (PZT) thin films in Cl2/Ar plasma was investigated through the analysis of gas mixing ratio on volume and surface chemistries. Experiments showed that PZT etch rate keeps a constant value up to 40% of Ar addition into Cl2/Ar plasma. Langmuir probe measurement showed the noticeable influence of Cl2/Ar mixing ratio on electron temperature and electron density. The modeling of volume kinetics for neutral and charged particles indicated monotonic changes of both densities and fluxes of active species such as chlorine atoms and positive ions. The analysis of surface kinetics showed that PZT etch rate behavior may be explained by the combination of spontaneous and ion-assisted etch mechanisms.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
