Abstract
The dry etching characteristics of phase change material GeTe were investigated in inductively coupled BCl3/Ar plasma. By changing gas ratio, gas pressure, substrate bias power, and inductively coupled plasma (ICP) source power, respectively, various characteristics of GeTe films were investigated about surface roughness, etch rate and profiles. Etching damage was studied by analyzing the X-ray photoelectron spectroscopy results of etched blank GeTe films. We found that the etch rate increases with the increase of BCl3 content and substrate bias power. However, it first increases then decreases with the increase of gas pressure and ICP power. Surface becomes smooth with the increase of gas pressure, but the higher power and substrate bias power lead rougher surface. Little C contamination, oxidation and halogenated layer were remained on the surface during etching process, which can be removed easily by Ar+ sputtering. The stoichiometric ratio of GeTe is stable after being sputtered in tens of seconds on the etched surface, indicating the etching damage is low.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call