Abstract
The etching of Au thin films has been performed in an inductively coupled <TEX>$CF_4 / Cl_2 / Ar$</TEX> plasma. The etch properties including etch rate and selectivity were examined as <TEX>$CF_4$</TEX> content adds from o to <TEX>$30\%$</TEX> to <TEX>$Cl_2/Ar$</TEX> plasma. The <TEX>$Cl_2/(Cl_2 + Ar)$</TEX> gas mixing ratio was fixed at <TEX>$20\%$</TEX>. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of <TEX>$30^{\circ}C$</TEX>. The highest etch rate of the Au thin film was 370 nm/min at a <TEX>$10\%$</TEX> additive <TEX>$CF_4$</TEX> into <TEX>$Cl_2/Ar$</TEX> gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Transactions on Electrical and Electronic Materials
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
