Abstract
In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with <TEX>$SiO_2$</TEX>. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing <TEX>$CF_4$</TEX> content from 0 to 20 % in <TEX>$CF_4$</TEX>/Ar plasma. The TiN etch rate reached maximum at 20% <TEX>$CF_4$</TEX> addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in <TEX>$CF_4$</TEX>/Ar plasma.
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