Abstract
A comparative study of etching and annealing characteristics of Makrofol-DE for 28Si ions for different energies i.e. 100 MeV and 1.2 GeV was carried out. The values of various etching parameters, viz, bulk etch rate (VG), track etch rate (VT), critical angle (θC), sensitivity [S = (VT/VG)] of polycarbonate plastic detectors for registration of 28 Si ions, etching efficiency [η = 1−(VG/VT)] and activation energies for bulk (EG) and track etching (ET) were determined. The annealing kinetics of 28 Si ions damaged Makrofol-DE plastic has been explained by using various empirical formulations. Finally the experimental range is compared with corresponding theoretical values.
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