Abstract
A light-irradiated electrolytic etching technique was developed for GaAs crystals. This technique, which employs a chemical echant consisting of AgNO3, CrO3, HF and H2O, realize clear etch pit patterns in a thinly etched layer of GaAs. A square pattern and a triangular pattern appear on the {100} plane and {111} As plane, respectively. Etching depth is about one tenth that of traditional electrolytic etching without light. This makes application to accurate epitaxial layer evaluation possible. The patterns obtained by this method are shown to be dislocation pits by comparison with X-ray topography patterns. The clear patterns obtained can be made even when the etchant is at room temperature. The results open the way for practical evaluation of thin epitaxial layers.
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