Abstract
The inductively coupled plasma etching of platinum with \(BCl_3 /Cl_2\)-gas chemistries was examined. Plasma characteristics were investigated with increasing \(Cl_2\) ratios using a Langmuir probe and optical emission spectroscopy. The chemical reaction during the Pt etching was also examined via the chemical binding states of the etched surface, by X-ray photoelectron spectroscopy. The relationship between plasma and etch characteristics with various \(Cl_2\) gas mixing ratios is discussed. On the basis of the relationship, the Pt etching mechanism with \(BCl_3 /Cl_2\)-gas chemistries is described.
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