Abstract
The etch characteristics of films were investigated for magnetically enhanced reactive ion etching (MERIE) and inductively coupled plasma (ICP) etch systems as a function of bias power, source power, and gas chemistry. Compared to pure Ar sputtering, F-, Cl-, and Br-based plasma provided a significant chemical enhancement. Fluorine containing plasma produced higher etch rates compared to Cl and Br. The selectivity for over other semiconductor materials is low for all of the investigated two-gas mixtures. A polymerizing chemistry provides acceptable selectivity to Si, and was used for a patterning of an hard mask. These structures have been transferred into the Si wafer.
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