Abstract
A study of GaAs solar cells (SCs) with various quantum-sized objects has been carried out. In0.2Ga0.8As quantum wells, In0.4Ga0.6As quantum well-dots (QWDs), In0.8Ga0.2As and InAs quantum dots have been considered. The increment in photocurrent and the reduction of open-circuit voltage have been calculated using dark IV and spectral characteristics. An analytical model for estimating the efficiency of triple-junction SCs with quantum objects has been described. The calculations have shown that the optimized QWDs have a potential for increasing the efficiency of GaInP/GaAs/Ge SC from 29.8% to 30.8% (AM0, 1 sun) and from 41.6% to 43.1% (AM1.5D, 360 suns).
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