Abstract
Image quality (IQ) values of an electron-back-scattering diffraction (EBSD) pattern were used to investigate layer recrystallization for the phosphorus-implanted 4H SiC. We prepared a slope-structured amorphous Si on a Si substrate sample to simulate the recrystallization model of the ion-implanted layer after activation annealing. Phosphorus-implanted and recrystallize-annealed Si and SiC samples were also investigated and the Kikuchi-pattern obscuration was observed for a thicker a-Si layer on the slope-structured sample. The IQ values also decreased. Our results show that ion-implantation damage recovery can be estimated by the EBSD pattern analysis. IQ value variation is in good agreement with the sheet resistance changing with the annealing temperature. The IQ values obtained from the EBSD measurements can be used for crystalline recovery estimation on impurity-implanted SiC layer in a nanoscale resolution.
Published Version
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