Abstract
The low-dose-rate response of five bipolar integrated circuits is evaluated on the basis of switching experiments. Such experiments consist of performing first a high-dose-rate irradiation followed by a low-dose-rate irradiation. Based on these experiments, a time-saving method to predict the low-dose-rate degradation of bipolar linear microcircuits is proposed. This approach provides a good estimate of the low-dose-rate degradation.
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