Abstract
Extreme ultraviolet (EUV) power and wafer throughput were estimated based on a scanning imaging system. The EUV power on a mask was estimated from the number of reflective mirrors, their reflectivity, resist sensitivity, scanning speed and exposure time. Wafer throughput was estimated for one-way scanning exposure. The EUV power required for a given wafer throughput was determined. For a given acceleration of the mask stage and scanning length, there is an optimal scanning speed that yields the maximum throughput. Assuming an exposure time of 0.1 s and a resist sensitivity of 5 mJ/cm2, the estimated EUV power on a mask is about 10 W. For a scanning speed of 100 cm/s and a stage acceleration of 3×g, the resultant throughput should be 80 or more. The present analysis has shown that a high EUV power is required to obtain the same throughput as that of optical lithography.
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