Abstract
Quantitative assessment of p- to n- type conversion due to reactive ion etching (RIE) of p-type Hg0.71Cd0.29Te is presented using laser-beam-induced-current (LBIC) measurements. For the RIE processing conditions used (390 mT, CH4/H2, 0.4 W/cm2), n-type conversion was observed in extrinsic arsenic-doped p-type Hg0.71Cd0.29Te which had previously undergone a Hg anneal to eliminate Hg vacancies. Effective doping density of the n-type converted region is determined by fitting a theoretically determined LBIC signature to the measured LBIC signal over a temperature range 80–300 K. Effective n-type doping density is the only fitting parameter used in the simulation, which was carried out using a commercial semiconductor device modeling package (SEMICAD™ DEVICE). This noncontact experimental technique promises to be a useful tool in the characterization of p-n junction diodes in HgCdTe, and for studying the precise nature of p to n conversion in p-type HgCdTe.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
