Abstract
Typical depths and rechargeable times for deep levels in low noise field effect transistors under the power pulse depending on f transistor parameters, pulse amplitude, electron capture cross-section have been estimated. Based on this estimations and experimental date, including measured noise figure and associated gain of typical transistors, the parasitical buffer layer conductance effect on performance of low noise amplifier with bipolar power supply and unipolar power supply has been analyzed. It is shown that noise figure of amplifier under power pulse can be increased twice for bipolar power supply and tree times for unipolar power supply
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
