Abstract
An experimental extraction of a low noise field effect transistor's linear equivalent circuit and noise model is presented. The linear equivalent circuits and noise models are extracted for two types of FET (3P374A-5 manufactured by joint-stock company "Planet-GaAs", "Sozvezdiye-P" manufactured by FSUC RPC "Istok") and two types PHEMT manufactured by FSUC RPC "Istok" (molecular beam epitaxy structure and metalorganic vapor phase epitaxy structure).
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