Abstract
An electron spin resonance (ESR) method has been used to examine the paramagnetic behavior of the conduction electrons from phosphorus and of those from thermal donor (TD) in Czochralski-grown (CZ) silicon crystals at 113-173 K. The paramagnetic behavior of the conduction electrons from TD differed from that of electrons from phosphorus. This difference is discussed in terms of the difference in the relaxation times and the scatter of the conduction electrons by the ionized TD.
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