Abstract
Phosphorus ion implantations of 6H-SiC in the mean phosphorus concentration of the implanted layer of ∼1 × 10 18 cm −3 were performed both at multi-fold energy between 9 and 21 MeV and at 340 keV. In the high-energy implantations at room temperature, 400, 800 and 1200 °C and in the 340 keV implantations at 800 °C, electron spin resonance spectra arising from isolated shallow phosphorus donors have been observed after post-implantation annealing at 1650 °C, but were not observed in as-implanted state.
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