Abstract
Two hydrogen and two Si-related defect centers were detected and characterized by electron spin resonance (ESR) in diamond films grown by chemical vapor deposition. Observation of hyperfine structure, combined with illumination and polishing treatments, suggests that the KUL2 and KUL9 ESR centers originate from two charge states of one defect, containing a vacancy and an adjacent hydrogen atom, while the KUL1 and KUL8 centers can be associated with two charge states of another defect, involving one Si atom. The KUL2 and KUL9 centers are tentatively assigned to [H–2V]— and [H–2V]0 complexes, respectively.
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