Abstract
ESCA studies have been carried out on a number of Pb1−xSnxTe surfaces with the goal of correlating surface chemistry with surface leakage currents observed in Pb1−xSnxTe infrared detectors. A diode array structure has been developed which permits I–V and ESCA measurements to be carried out on the same surface. It is possible to reprocess this array to change the surface chemistry without altering the bulk semiconductor characteristics. ESCA results have established the existence of thick (hundreds of angstrom) elemental Te0 layers on several chemically processed device surfaces. These surfaces are shown to produce exceptionally low surface leakage currents at 77 K which suggests that Te0 may be a surface passivant for Pb1−xSnxTe. A dimensional analysis model has been developed which seems capable of estimating surface and bulk contributions to leakage currents.
Published Version
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