Abstract
First Page
Highlights
Erratum: “Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique” [APL Mater. 4, 076104 (2016)]
We have noticed a mistake in reporting the XPS peak energies of Hf 4f 5/2 and 4f 7/2 from oxide layers at line 28 of page 2.1 The values should be corrected to be 20 and 18 eV for Hf 4f 5/2 and 4f 7/2, respectively
This correction does not change the interpretation of the results
Summary
Erratum: “Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique” [APL Mater. 4, 076104 (2016)].
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