Abstract
AbstractThe erosion behaviour of doped carbon materials was investigated in deuterium low pressure discharges. Therefore, amorphous carbon films on silicon substrates (film thickness ∼1 μm) with varying dopant species (V, Ti andW), dopant concentration (between 1 at% and 8.5 at%) and dopant distribution were exposed to the plasma. The dopant distribution is either atomically disperse or, by heating up to 1100 K, carbide grains in nm size are formed. All important plasma parameters are obtained by a combination of several diagnostic techniques like optical emission spectroscopy, energy resolved mass spectroscopy and Langmuir probe measurements. The morphology of the plasma treated surfaces was investigated afterwards by scanning electron microscopy and atomic force microscopy, the layer composition by ion beam analysis. Every investigated sample shows a strong decrease of the erosion yield with increasing fluence. The achieved erosion yields are clearly below the yield of undoped amorphous carbon and depend strongly on the dopant concentration. The lowest yields were achieved with the samples with atomically disperse dopant distribution due to metal enrichment at the surface. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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