Abstract
In the course of molecular-beam epitaxy of Er-doped Si on Si(100) substrates at 450–650°C, the dopant tends to segregate in the surface layer at doping levels from 1017 to above 1019 cm–3. The introduction of oxygen into the growing epilayer—either from the gas phase at an oxygen pressure of 6.7 × 10–6 Pa or from an SiO2 layer on the substrate surface—suppresses the surface segregation of Er.
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