Erbium luminescence in sol–gel derived oxide glass films

Abstract

Sol–gel derived Al2O3, SiO2, TiO2 and In2O3 films, containing about 10 wt.% Er2O3 have been fabricated and the erbium PL (photoluminescence) in the region of 1.53 μm has been investigated. In contrast to erbium implanted films, a strong influence of host matrix local environment on the electronic structure of Er ions was observed in the Er PL. The dependence of the Er PL on the chemical composition of sol–gel derived matrix, and its change with temperature, are reported.