Equivalent model for band-to-band tunneling simulation of direct-gap III–V semiconductor nanowires

Abstract

We have proposed an equivalent model for use in the simulation of tunnel devices. The equivalent model reproduces not only the real band-structure but also the complex band-structure of a target system. It has the features of adjustable spatial resolution and high spatial symmetry. We have tested it by calculating the band-to-band transmission functions and the maximum current of direct-gap III–V semiconductor nanowires, and confirmed that it correctly reproduces the transport characteristics of the target system. The equivalent model enables us to substantially reduce the Hamiltonian matrix size, leading to speed-up the quantum transport simulation of tunnel devices, such as tunnel field-effect transistors.