Abstract
Extensive data are collected and presented to test the coupled-carrier equations and attending density-switching criterion proposed to describe nonthermal threshold switching in amorphous semiconductors. The equations and switching criterion predict in magnitude and functional form a wide range of phenomena found in the off-state, during the switching-on, in the on-state, and during the switching-off of amorphous chalcogenide films. The critical temperature noted in a variety of experiments is identified as the elevated temperature at which the switching criterion is fulfilled thermally in the presence of a small field.
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