Abstract
This paper presents equations for the electron density of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures in three realistic scenarios: (1) AlGaN/GaN heterostructure with surface exposed to ambient with mobile ions, (2) metal gate deposited on the AlGaN surface, and (3) a thick dielectric passivation layer on the AlGaN surface. To derive the equations, we analyzed these scenarios by applying Gauss’s law. In contrast to the idealistic models, our analysis shows that the 2DEG charge density is proportional to the difference between spontaneous polarization of AlGaN and GaN, whereas surprisingly, it is independent of the piezoelectric polarization.
Highlights
Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) heterostructures are widely used in devices for high power and radio frequency applications because they enable higher current and faster switching speed [1,2,3,4,5]
Both capabilities are the results of high electron mobility and high electron density of the two-dimensional electron gas (2DEG), which is formed at the AlGaN/GaN heterojunction even in the absence of intentional doping [6]
We show that N2DEG depends on the difference between spontaneous polarizations of
Summary
Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) heterostructures are widely used in devices for high power and radio frequency applications because they enable higher current and faster switching speed [1,2,3,4,5] Both capabilities are the results of high electron mobility and high electron density of the two-dimensional electron gas (2DEG), which is formed at the AlGaN/GaN heterojunction even in the absence of intentional doping [6]. AlGaN surface is unpassivated and accessible by free ions from the ambient; Metal gate is deposited on the AlGaN surface; The AlGaN surface is passivated by a thick dielectric layer The results of this analysis are realistic equations for N2DEG
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