Epitaxy of triangular GaN nanoislands on (010) β-LiGaO2 substrate

Abstract

Aligned triangular GaN nanoislands were successfully grown on closely lattice-matched Au coated (010) β-LiGaO2 substrates by chemical vapor deposition method. The morphologies of GaN nanostructures were characterized by scanning electron microscopy. Structural properties of the GaN nanostructures were investigated by X-ray diffraction and transmission electron microscopy. Cross-section transmission electron microscopy results shown direct evidences of the in-plane structural relationship between GaN nanostructure and (010) β-LiGaO2 substrate. The optical properties of GaN nanostructures were studied by room temperature photoluminescence.