Abstract
In this study, self-catalyzed β-FeSi2 nanowires, having been wanted but seldom achieved in a furnace, were synthesized via chemical vapor deposition method where the fabrication of β-FeSi2 nanowires occurred on Si (100) substrates through the decomposition of the single-source precursor of anhydrous FeCl3 powders at 750–950 °C. We carefully varied temperatures, duration time, and the flow rates of carrier gases to control and investigate the growth of the nanowires. The morphology of the β-FeSi2 nanowires was observed with scanning electron microscopy (SEM), while the structure of them was analyzed with X-ray diffraction (XRD) and transmission electron microscopy (TEM). The growth mechanism has been proposed and the physical properties of the iron disilicide nanowires were measured as well. In terms of the magnetization of β-FeSi2, nanowires were found to be different from bulk and thin film; additionally, longer β-FeSi2 nanowires possessed better magnetic properties, showing the room-temperature ferromagnetic behavior. Field emission measurements demonstrate that β-FeSi2 nanowires can be applied in field emitters.
Highlights
As the dimension of Complementary metal-oxide-semiconductor (CMOS) devices is down to the nanoscale, metal silicide technology will be even more significant; the substrate of many photonics and microelectronics devices has been silicon
The magnetic property measurements of the β-FeSi2 nanowires were conducted by the Superconducting Quantum Interference Device (SQUID) with the Vibrating sample magnetometer (VSM) option, while field emission property was measured by Kiethly-237
We explored the parameters that could affect the growth of the β-iron disilicide nanowires
Summary
As the dimension of CMOS devices is down to the nanoscale, metal silicide technology will be even more significant; the substrate of many photonics and microelectronics devices has been silicon. CrSi2, β-FeSi2, and MnSi are suitable as thermoelectric materials due to their narrow energy gap and great thermostability [6]; NiSi, CoSi2, and TiSi2 are frequently utilized as materials of the metal gate for decreasing the resistance [7]. With excellent properties, such as high compatibility and low defect density, one-dimensional nanostructures are promising for current and future microelectronic devices [8], drawing widespread attention from academic studies and from industry applications [9]. We report direct growth and structural characterization of the single crystalline β-FeSi2 nanowires via a chemical vapor deposition method.
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