Abstract
In this work, a plasma-assisted molecular-beam epitaxy (PA-MBE) was used to prepare high-quality ZnO thin films on p-type silicon substrates. Be/BeO composite buffer layers were designed to improve the crystal quality of ZnO thin films. Based on the ZnO thin films, we fabricated interdigitated electrode MSM structure photoconductive UV detector by lithography, electron beam evaporation and other traditional semiconductor processes. In addition, dark current, spectral response of the UV detector were measured by responsivity testing system to explore the application of ZnO based UV detectors.
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