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Abstract
X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to characterize as-deposited epitaxial VN(001) layers grown in situ. The films were deposited on MgO(001) at 650 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67 Pa). Mg Kα and monochromatic Al Kα x-ray sources were used to generate the XPS spectra, while the UPS data were generated by He I and He II UV radiation. Analysis of the results show that the VN(001) surfaces are free of O and C. The films were found to be stoichiometric in agreement with Rutherford backscattering spectroscopy (RBS) results, yielding a N/V ratio of 1.06±0.02.
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