Abstract
SrRuO3 thin film electrodes are epitaxially grown on SrO buffered-Si(001) substrates by pulsed laser deposition. The optimum conditions of the SrO buffer layers for epitaxial SrRuO3 films are a deposition temperature of 700 °C, deposition pressure of 1 × 10−6 Torr, and thickness of 6 nm. The 100 nm thick-SrRuO3 bottom electrodes deposited above 650 °C on SrO buffered-Si (001) substrates have a rms (root mean square) roughness of approximately 5.0 A and a resistivity of 1700 µω-cm, exhibiting an epitaxial relationship. The 100 nm thick-Pb(Zr0.2Ti0.8)O3 thin films deposited at 575 °C have a (00l) preferred orientation and exhibit 2Pr of 40 µC/cm2, Ec of 100 kV/cm, and leakage current of about 1 × 10−7 A/cm2 at 1 V. The silicon oxide phase which presents within PZT and SrRuO3 films, influences the crystallinity of the PZT films and the resistivity of the SrRuO3 electrodes.
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