Abstract
Epitaxial solar cell structures grown on polycrystalline silicon ’’ribbon’’ substrates (prepared by the edge-defined-growth process) are compared to devices made by direct diffusion into similar material. Efficiency values of 10% (AM-1) have been achieved by the epitaxial structures, which are substantially higher than achieved by diffusion. The improvement is shown to result mainly from the lower saturation current density of the epitaxial junctions.
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