Abstract
Epitaxial growth of silicon on porous silicon layers has been obtained at a low temperature (820°C) in a reduced pressure vapour phase apitaxy reactor, using SiH 4 as the reactive gas and a lamp-heating system allowing rapid thermal processing. Silicon epitaxy has been studied on different porous layers formed on both highly doped (p +, n +) and lightly doped (p, n) substrates. As shown by cross-sectional transmission electron microscopy observations, very good crystalline quality is obtained for epitaxial layers growm over p +- and n +-type porous layers, with the same defect density as that obtained in epilayers grown in the same conditions on bulk silicon. However, the initial porosity of the layer appears to be a critical parameter, and a defect density increase is observed if the porosity of the substrates exceeds 50%. In the case of lightly doped substrates, although single-crystal growth is actually obtained, a large defect density is found.
Published Version
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