Abstract
The nanolayers of single crystal SiC were grown on the surface of a high-resistance n-type silicon substrates by replacement of the atoms in the crystal lattice of silicon on the carbon atoms at the temperatures of 1250, 1330 °C and CO gas pressures 264, 395 Pa, respectively. The formation of crystalline β-SiC phase in films by electron diffraction and Raman spectroscopy techniques was shown. The SiC films are epitaxial and do not contain twins on the surface. By Atomic Force Microscopy is shown that two set of SiC films have pyramidal and step-like structure of the surface with clear-cut fragmentation of grains with sizes between 100 and 200 nm, and this is due to the composition of carbon and silicon atoms in the layer. Two set of SiC films have a granular surface structure with indistinct grain fragmentation. The influence of synthesis condition on the microstructure of film surface is discussed.
Highlights
In a series of papers, generalized in review [1], it has been developed theoretically and experimentally implemented a new method of growth of high quality thin SiC films on Si
The nanolayers of single crystal SiC were grown on the surface of a high-resistance n-type silicon substrates by replacement of the atoms in the crystal lattice of silicon on the carbon atoms at the temperatures of 1250, 1330 °C and CO gas pressures 264, 395
By Atomic Force Microscopy is shown that two set of SiC films have pyramidal and step-like structure of the surface with clear-cut fragmentation of grains with sizes between 100 and 200 nm, and this is due to the composition of carbon and silicon atoms in the layer
Summary
In a series of papers, generalized in review [1], it has been developed theoretically and experimentally implemented a new method of growth of high quality thin SiC films on Si. The process of replacement occurs gradually without destroying the crystal structure of silicon. According [1] the process of silicon atoms replacement on the carbon atoms can be realized by using such chemical reaction as 2Si + CO = SiC + SiO. It is known [2] that SiC has more than 170 different polytypes. Raman spectroscopy is an efficient and non-destructive technique which may be used to identify the structure of the SiC polytype. In this work, using Raman spectroscopy, electron microscopy and Atomic Force Microscopy the nanolayers of single crystal SiC grown by this method, have been investigated
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