Abstract
Electron backscatter diffraction (EBSD) and electron channeling contrast imaging (ECCI) were employed to investigate epitaxial SiC growth on 4H-SiC mesa structures. SiC polytypes were identified by indexing Kikuchi maps recorded from various points on the mesa surfaces. Orientation contrast was observed between different polytype surfaces using ECCI by forescattered electron detection. Extended defects in 3C-SiC were imaged directly by ECCI. Additionally, the ECCI technique was utilized to correlate dislocations with atomic step morphologies for various mesa surfaces. Evidence of vertical growth enhancement in the form of additional faceting was attributed to the presence of threading screw dislocations at mesa surfaces. Atomic steps were observed very near the edges of some mesa surfaces free of dislocations.
Published Version
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