Abstract
By an improved Al2O3(100) growth on Si(100) using O2 gas instead of N2O gas, high-crystalline quality silicon on insulator (SOI) and multistacked SOI structures were successfully fabricated on a 2-inch Si(100) wafer by the ultrahigh-vacuum chemical vapor deposition (UHV-CVD) method. The surface morphology of the Si top layer of the fabricated SOI structure is better than that of the silicon on sapphire (SOS) structure grown by the UHV-CVD method. The transistor action was confirmed from the electrical properties of the MOSFET, and the field effect mobility of 748 cm2/V s was obtained. These results were similar to those obtained from bulk Si. This improved Si top layer of SOI and multistacked SOI structures is due to the improved surface morphology and crystalline quality of the Al2O3 layer grown on Si with O2 gas.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
